Integrated photonic semiconductor devices and methods for making integrated photonic semiconductors devices

US7668223B2 · kind B2 · utility

Assignee

• Avago Technologies Fiber IP (Singapore) Pte. Ltd. · SG

Inventors

• Marzia Rosso · Rivalta, IT
• Alessandro Stano · Vastalla, IT
• Ruiyu Fang · Torino, IT
• Paolo Valenti · Torino, IT
• Pietro Della Casa · Mantova, IT
• Simone Codato · Vastalla, IT
• Cesare Rigo · Torino, IT
• Claudio Coriasso · Torino, IT

Key dates

• Filing date: Feb 22, 2008
• Grant date: Feb 23, 2010
• Expiry date: Feb 22, 2028

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01S5/2272
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

A photonic semiconductor device and method are provided that ensure that the surface of the device upon completion of the SAG process is planar, or at least substantially planar, such that performance of the subsequent processes is facilitated, thereby enabling higher manufacturing yield to be achieved. A photonic semiconductor device and method are also provided that ensure that the isolation region of the device will have high resistance and low capacitance, without requiring the placement of a thick dielectric material beneath each of the contact pads. Eliminating the need to place thick dielectric materials underneath the contact pads eliminates the risk that the contact pads will peel away from the assembly.