Method of fabricating a phase-change memory
US7670871B2 · kind B2 · utility
Inventors
Key dates
| Filing date | Aug 6, 2008 |
| Grant date | Mar 2, 2010 |
| Priority date | — |
| Expiry date | Aug 6, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8828
Abstract
A phase-change memory comprises a bottom electrode formed on a substrate. A first isolation layer is formed on the bottom electrode. A top electrode is formed on the isolation layer. A first phase-change material is formed in the first isolation layer, wherein the top electrode and the bottom electrode are electrically connected via the first phase-change material. Since the phase-change material can have a diameter less than the resolution limit of the photolithography process, an operating current for a state conversion of the phase-change material pattern may be reduced so as to decrease a power dissipation of the phase-change memory device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.