Nanowire-templated lateral epitaxial growth of non-polar group III nitrides
US7670933B1 · kind B1 · utility
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Key dates
| Filing date | Oct 3, 2007 |
| Grant date | Mar 2, 2010 |
| Priority date | — |
| Expiry date | Apr 21, 2028 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/891
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for growing high quality, nonpolar Group III nitrides using lateral growth from Group III nitride nanowires. The method of nanowire-templated lateral epitaxial growth (NTLEG) employs crystallographically aligned, substantially vertical Group III nitride nanowire arrays grown by metal-catalyzed metal-organic chemical vapor deposition (MOCVD) as templates for the lateral growth and coalescence of virtually crack-free Group III nitride films. This method requires no patterning or separate nitride growth step.
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