Method for producing doped regions in a substrate, and photovoltaic cell

US7670937B2 · kind B2 · utility

Assignee

• COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventors

• Yannick Veschetti · Concarneau, FR
• Armand Bettinelli · Voiron, FR

Key dates

• Filing date: Sep 7, 2007
• Grant date: Mar 2, 2010
• Expiry date: Aug 12, 2028

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02P70/50

Abstract

Method for producing doped regions on the rear face of a photovoltaic cell. A doping paste with a first type of conductivity is deposited on a rear face of a semiconductor-based substrate according to a pattern consistent with the desired distribution of regions doped with the first type of conductivity. Then, an oxide layer is deposited at least on the portions of the rear face of the substrate not covered with the doping paste. Finally, an annealing of the substrate diffuses the doping agents in the substrate and forms doped regions under the doping paste.