Semiconductor device and method of producing the same
US7671360B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 4, 2007 |
| Grant date | Mar 2, 2010 |
| Priority date | — |
| Expiry date | Feb 12, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/884
Abstract
A phase change memory includes a sidewall insulation film and a heater electrode which are formed in a contact hole formed in an interlayer insulation film on a lower electrode. The heater electrode has a recessed structure. In a recessed area surrounded by the sidewall insulation film, the heater electrode and a phase change film are contacted with each other. A phase change region is formed only in an area contacted with the sidewall insulation film. The sidewall insulation film is an anti-oxidizing insulation film. The phase change region and the heater electrode which are heated to a high temperature upon rewriting are not contacted with the interlayer insulation film as an oxidizing insulation film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.