Semiconductor system for voltage limitation
US7671379B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jul 15, 2005 |
| Grant date | Mar 2, 2010 |
| Priority date | — |
| Expiry date | Jan 22, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/204
Abstract
A semiconductor system for voltage limitation includes a first cover electrode, a highly p-doped semiconductor layer that is connected to the first cover electrode, a slightly n-doped semiconductor layer that is connected to the highly p-doped semiconductor layer and a second cover electrode. At least one p-doped semiconductor layer and two highly n-doped semiconductor layers are provided next to one another in an alternating sequence between the slightly n-doped semiconductor layer and the second cover electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.