Semiconductor devices having faceted channels and methods of fabricating such devices
US7671420B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 18, 2005 |
| Grant date | Mar 2, 2010 |
| Priority date | — |
| Expiry date | Oct 27, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/0193
Abstract
Disclosed are processes and techniques for fabricating semiconductor substrates for the manufacture of semiconductor devices, particularly CMOS devices, that include selectively formed, high quality single crystal or monocrystalline surface regions exhibiting different crystal orientations. At least one of the surface regions will incorporate at least one faceted epitaxial semiconductor structure having surfaces that exhibit a crystal orientation different than the semiconductor region on which the faceted epitaxial semiconductor structure is formed. According, the crystal orientation in the channel regions of the NMOS and/or PMOS devices may be configured to improve the relative performance of at least one of the devices and allow corresponding redesign of the semiconductor devices fabricated using such a process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.