Integrated circuit fuse structures including spatter shields within opening of an insulating layer and spaced apart from a sidewall of the opening
US7671443B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Mar 5, 2007 |
| Grant date | Mar 2, 2010 |
| Priority date | — |
| Expiry date | Aug 30, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
At least one fuse pattern extending in a first direction is formed on a fuse region of a substrate. A preliminary first insulating pattern is formed on the fuse region to cover the fuse pattern. A conductive layer is formed on the preliminary first insulating pattern. The conductive layer and the preliminary first insulating pattern are etched to form at least one fence extending in a second direction substantially perpendicular to the first direction. Related fuse structures are also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.