Patent · US Active

Integrated circuit fuse structures including spatter shields within opening of an insulating layer and spaced apart from a sidewall of the opening

US7671443B2 · kind B2 · utility

2Cited by
2References
19Claims
0Family size

Assignee

Inventor

Key dates

Filing dateMar 5, 2007
Grant dateMar 2, 2010
Priority date
Expiry dateAug 30, 2027

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2924/0002
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

At least one fuse pattern extending in a first direction is formed on a fuse region of a substrate. A preliminary first insulating pattern is formed on the fuse region to cover the fuse pattern. A conductive layer is formed on the preliminary first insulating pattern. The conductive layer and the preliminary first insulating pattern are etched to form at least one fence extending in a second direction substantially perpendicular to the first direction. Related fuse structures are also disclosed.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.