Phosphor converted light emitting device
US7671529B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 10, 2004 |
| Grant date | Mar 2, 2010 |
| Priority date | — |
| Expiry date | Jul 21, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/8513
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
A semiconductor light emitting device is combined with a wavelength converting material. The semiconductor light emitting device is configured to emit first light of a first peak wavelength. The wavelength converting material is configured to absorb at least a portion of the first light and emit second light of a second peak wavelength. In some embodiments, the first wavelength converting material is (Ba1-xSrx)2-y-0.5zSi5N8-zOz:Euy2+ where 0.2<x<0.3, (Ba1-xCax)2-y-0.5zSi5N8-zOz:Euy2+ where 0.01<x<0.2, or M2Si5-aAaN8-aOa:Eu2+ where M=Sr, Ba, Ca; A=Al, B, Ga, Sc; and 0.01<a<0.2.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.