Patent · US Active

Phosphor converted light emitting device

US7671529B2 · kind B2 · utility

17Cited by
15References
8Claims
0Family size

Assignee

Inventors

Key dates

Filing dateDec 10, 2004
Grant dateMar 2, 2010
Priority date
Expiry dateJul 21, 2028

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10H20/8513
  • WIPO fieldBasic materials chemistry
  • WIPO sectorChemistry

Abstract

A semiconductor light emitting device is combined with a wavelength converting material. The semiconductor light emitting device is configured to emit first light of a first peak wavelength. The wavelength converting material is configured to absorb at least a portion of the first light and emit second light of a second peak wavelength. In some embodiments, the first wavelength converting material is (Ba1-xSrx)2-y-0.5zSi5N8-zOz:Euy2+ where 0.2<x<0.3, (Ba1-xCax)2-y-0.5zSi5N8-zOz:Euy2+ where 0.01<x<0.2, or M2Si5-aAaN8-aOa:Eu2+ where M=Sr, Ba, Ca; A=Al, B, Ga, Sc; and 0.01<a<0.2.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.