Flash memory device and program method thereof
US7672170B2 · kind B2 · utility
5Cited by
8References
27Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 27, 2007 |
| Grant date | Mar 2, 2010 |
| Priority date | — |
| Expiry date | Jan 31, 2028 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/3454
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method for programming a flash memory device with a plurality of memory cells. A selected memory cell is programmed under a condition where a bulk area is biased with a high voltage. A program pass/fail of the memory cell is verified with the high voltage applied to the bulk area.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.