Elastic power for read and write margins
US7672187B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 31, 2007 |
| Grant date | Mar 2, 2010 |
| Priority date | — |
| Expiry date | May 12, 2028 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/417
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
An elastic power header device and methods of operation are provided to improve both the read and the write margin of static random access memory (SRAM) cells by increasing read stability, reducing read disturbance and improving the Signal to Noise Margin (SNM) figure of merit. For example, various implementations of an elastic power header device are utilized as programmable resistances to permit the power supply lines to reach a maximum voltage. Allowing the power supply lines to reach the reference voltage allows more flexibility in read margin, write margin and read stability. Furthermore, this additional flexibility can be controlled by means for adjusting a voltage. This adjustment voltage can fine-tune the programmable resistances so that the read margin and the write margin can be more conveniently controlled.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.