Patent · US Active

Light emitting diode structures

US7672548B2 · kind B2 · utility

2Cited by

6References

8Claims

0Family size

Assignee

Luxtaltek Corporation · TW

Inventors

Majd Zoorob · Southampton, GB
John Lincoln · Devizes, GB

Key dates

Filing date	Dec 29, 2008
Grant date	Mar 2, 2010
Priority date	—
Expiry date	Dec 29, 2028

Classification

Technology area (CPC H)Electricity
CPC primaryH10H20/872
WIPO fieldMicro-structural and nano-technology
WIPO sectorChemistry

Abstract

Light emitting diode (LED) structures are described that include a first layer and a light-generating layer, wherein light generated in the light-generating layer generally emerges from the LED structure through the upper surface of the first layer. The coupling out of light generated by spontaneous emission is enhanced by the presence of patterning in the first layer, which may take the form of an embedded photonic quasicrystal, a photonic structure comprising an amorphous array of subregions, or a zone plate structure. The invention provides the benefit of improved light extraction from the LED without undesirable far field illumination patterns.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.