Method for producing a transistor component having a field plate

US7674678B2 · kind B2 · utility

Assignee

• Infineon Technologies Austria AG · AT

Inventors

• Uli Hiller · Bad Abbach, DE
• Oliver Blank · Villach, AT

Key dates

• Filing date: May 5, 2008
• Grant date: Mar 9, 2010
• Expiry date: May 5, 2028

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/518

Abstract

A method for producing a transistor component having a field plate. One embodiment includes providing a semiconductor body having a first side, and including a first trench extending into the semiconductor body. A field plate dielectric layer is produced on the first side and at uncovered areas of the first trench such that a residual trench remains. A field plate layer is produced in the residual trench. The first side of the semiconductor body is uncovered using a polishing method. The field plate dielectric layer is partially removed from the at least one first trench proceeding from the first side.