Inhibition of metal diffusion arising from laser dicing
US7674690B2 · kind B2 · utility
0Cited by
4References
20Claims
0Family size
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Key dates
| Filing date | Jul 15, 2008 |
| Grant date | Mar 9, 2010 |
| Priority date | — |
| Expiry date | Jul 15, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02076
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method divides a wafer into at least one chip. The chip includes internal metallic features. The dividing deposits at least one metallic substance on the outer surface of the chip. After so dividing the chip, the process exposes the chip to a heated ambient environment having a given pressure (e.g., less than one atmosphere). The environment comprises a chemical agent capable of bonding with the metallic substance. Additionally, wet chemical etch can be performed on the chip.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.