Light emitting transistor
US7675071B2 · kind B2 · utility
1Cited by
4References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 26, 2007 |
| Grant date | Mar 9, 2010 |
| Priority date | — |
| Expiry date | Nov 27, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/819
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
Provided is a light emitting transistor comprising a first conductivity-type collector layer formed on a substrate; a second conductivity-type base layer formed on the collector layer; and a first conductivity-type emitter layer formed on the base layer. At least one of the collector layer, the base layer, and the emitter layer has a nanorod structure with a plurality of nanorods.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.