Light-emitting diode and method for manufacturing the same

US7675077B2 · kind B2 · utility

Assignee

• Epistar Corporation · TW

Inventors

• Shih-Chang Shei · Danei, TW
• Schang-Jing Hon · Hsinchu, TW
• Shih-Chen Wei · Tainan, TW
• Juh-Yuh Su · Yongkang, TW

Key dates

• Filing date: Jan 25, 2007
• Grant date: Mar 9, 2010
• Expiry date: Jun 30, 2027

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/8316

Abstract

A light-emitting diode (LED) and a method for manufacturing the same are described. The light-emitting diode comprises: a conductive substrate including a first surface and a second surface opposite to the first surface; a metal bonding layer deposed on the first surface of the conductive substrate; a reflective metal layer deposed on the metal bonding layer; an N-type semiconductor layer deposed on the reflective metal layer; an active layer deposed on the N-type semiconductor layer; a P-type semiconductor layer deposed on the active layer; a window layer deposed on the P-type semiconductor layer, wherein a thickness of the window layer is substantially at least 50 μm, and the window layer is composed of a transparent conductive material; and a P-type electrode deposed on the window layer.