Metal oxide semiconductor field effect transistor and method of fabricating the same
US7675126B2 · kind B2 · utility
121Cited by
2References
14Claims
0Family size
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Inventor
Key dates
| Filing date | Dec 29, 2005 |
| Grant date | Mar 9, 2010 |
| Priority date | — |
| Expiry date | Nov 29, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/314
Abstract
There are provided a MOSFET and a method for fabricating the same. The MOSFET includes a semiconductor substrate, a first epitaxial layer in a predetermined location of the semiconductor substrate, a second epitaxial layer doped with high concentration impurity ions on the first epitaxial layer, a gate structure on the second epitaxial layer, and source/drain regions with lightly doped drain (LDD) regions. The first epitaxial layer supplies carriers to the second epitaxial layer so that short channel effects are reduced.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.