Persistent p-type group II-IV semiconductors
US7675133B2 · kind B2 · utility
2Cited by
20References
20Claims
0Family size
Inventors
Key dates
| Filing date | Jun 17, 2005 |
| Grant date | Mar 9, 2010 |
| Priority date | — |
| Expiry date | Jun 17, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/347
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A persistent p-type group II-VI semiconductor material is disclosed containing atoms of group II elements, atoms of group VI elements, and a p-type dopant which replaces atoms of the group VI element in the semiconductor material. The p-type dopant has a negative oxidation state. The p-type dopant causes formation of vacancies of atoms of the group II element in the semiconductor material. Fabrication methods and solid state devices containing the group II-VI semiconductor material are disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.