Temperature compensated work function based voltage reference
US7675134B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Apr 7, 2008 |
| Grant date | Mar 9, 2010 |
| Priority date | — |
| Expiry date | Sep 13, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D89/10
- WIPO fieldControl
- WIPO sectorInstruments
Abstract
A temperature compensated voltage reference is created from an operational amplifier circuit having two substantially identical P-channel metal oxide semiconductor (P-MOS) transistors with each one having a different gate dopant. The different gate dopants result in different threshold voltages for each of the two otherwise substantially identical P-MOS transistors. The difference between these two threshold voltages is then used to create the voltage reference equal to the difference. The two P-MOS transistors are configured as a differential pair in the operational amplifier circuit and the output of the operational amplifier is used as the voltage reference. The transistor widths of two P-MOS transistors are adjusted to minimize voltage variation over a temperature range.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.