Semiconductor device including an insulating film and insulating pillars and manufacturing method of the semiconductor device
US7675183B2 · kind B2 · utility
2Cited by
7References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 22, 2008 |
| Grant date | Mar 9, 2010 |
| Priority date | — |
| Expiry date | Apr 25, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/12042
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device, which is comprised of a copper wiring layer which is formed above a semiconductor substrate, a pad electrode layer which conducts electrically to the copper wiring layer and has an alloy, which contains copper and a metal whose oxidation tendency is higher than copper, formed to extend to the bottom surface, and an insulating protective film which has an opening extended to the pad electrode layer, is provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.