Patent · US Active

Phase-change memory (PCM) based universal content-addressable memory (CAM) configured as binary/ternary CAM

US7675765B2 · kind B2 · utility

26Cited by
7References
6Claims
0Family size

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Key dates

Filing dateNov 3, 2005
Grant dateMar 9, 2010
Priority date
Expiry dateNov 16, 2026

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG11C15/046
  • WIPO fieldComputer technology
  • WIPO sectorElectrical engineering

Abstract

Content-addressable memory (CAM) cells comprised of phase change material devices (PCMDs), including PCMD-based binary CAM cells (PCMD-based BCAM cells), PCMD-based ternary CAM cells (PCMD-based TCAM cells), and PCMD-based universal CAM cells (PCMD-based UCAM cells). The PCMDs of the various PCMD-based CAM cells are configured and programmed in a manner that allows a logic “0” or a logic “1” to be stored by the CAM cell. The logic value stored by a given PCMD-based CAM cell depends on the program states of the PCMDs. A program state of a PCMD is determined by whether the phase change material of the PCMD has been allowed to solidify to a crystalline, low-resistance state during a programming operation, or whether the phase change material of the PCMD is forced to solidify to an amorphous, high-resistance state during the programming operation.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.