Process for producing thin film transistor having LDD region
US7678627B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 16, 2006 |
| Grant date | Mar 16, 2010 |
| Priority date | — |
| Expiry date | Apr 1, 2027 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S257/911
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
In a process for producing a TFT display, a polysilicon layer is patterned to define a first and a second TFT regions. A first doping material is implanted into a first exposed portion in the first TFT region to define a first doped region and a first channel region, and implanted into a second exposed portion in the second TFT region to define a second doped region and a second channel region. A second doping material is implanted into a third exposed portion smaller than the first exposed portion to form first source/drain regions and simultaneously define a first LDD region in the first TFT region. A first and a second gate structures are formed over the first and the second channel regions, respectively. In a certain direction, the first gate structure is longer than the first channel, and the second gate structure isn't longer than the second channel region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.