Method of reducing current leakage in a metal insulator metal semiconductor capacitor and semiconductor capacitor thereof
US7678659B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 2, 2006 |
| Grant date | Mar 16, 2010 |
| Priority date | — |
| Expiry date | Oct 12, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for reducing leakage current in a semiconductor capacitor. The method includes providing a top plate for collecting charge, providing a bottom plate for collecting an opposing charge to the top plate, providing a dielectric layer for insulation between the top plate and the bottom plate, providing a top contact, providing a bottom contact, providing a plurality of vias including top level vias for connecting the top plate to the top contact, and bottom level vias for connecting the bottom plate to the bottom contact; and separating a via and an adjacent structure such that their distance is greater than a minimum via spacing requirement of a foundry design rule for a semiconductor process producing the semiconductor capacitor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.