Vapor phase treatment of dielectric materials
US7678712B2 · kind B2 · utility
4Cited by
43References
36Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 22, 2005 |
| Grant date | Mar 16, 2010 |
| Priority date | — |
| Expiry date | Sep 25, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02359
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The invention concerns a method for applying a surface modification agent composition for organosilicate glass dielectric films. More particularly, the invention pertains to a method for treating a silicate or organosilicate dielectric film on a substrate, which film either comprises silanol moieties or has had at least some previously present carbon containing moieties removed therefrom. The treatment adds carbon containing moieties to the film and/or seals surface pores of the film, when the film is porous.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.