Vertical type semiconductor device and manufacturing method of the device
US7679104B2 · kind B2 · utility
8Cited by
2References
10Claims
0Family size
Assignee
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Key dates
| Filing date | Nov 8, 2007 |
| Grant date | Mar 16, 2010 |
| Priority date | — |
| Expiry date | Apr 9, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/256
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A vertical semiconductor element comprises: an electro-conductive substrate; a GaN layer, as a nitride compound semiconductor layer, which is selectively grown as a convex shape on one surface of the electro-conductive substrate through a buffer layer; a source electrode as a first electrode formed on the GaN layer; and a drain electrode as a second electrode formed on another surface of the electro-conductive substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.