Patent · US Active

Method for the production of a semiconductor substrate comprising a plurality of gate stacks on a semiconductor substrate, and corresponding semiconductor structure

US7679120B2 · kind B2 · utility

0Cited by

5References

4Claims

0Family size

Assignee

Qimonda AG · DE

Inventors

Jurgen Amon · Dresden, DE
Jurgen Faul · Radebeul, DE
Thomas Ruder · Dresden, DE
Thomas Schuster · Ottenbach, DE

Key dates

Filing date	Aug 31, 2006
Grant date	Mar 16, 2010
Priority date	—
Expiry date	May 20, 2027

Classification

Technology area (CPC H)Electricity
CPC primaryH10B12/485
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A semiconductor structure having a plurality of gate stacks on a semiconductor substrate provided with a gate dielectric. The gate stacks have a lower first layer made of polysilicon, an overlying second layer made of a metal silicide, and an upper third layer made of an insulating material, and a sidewall oxide on the sidewalls of the first and second layers. The sidewall oxide is thinned or removed on one of the sidewalls, and the gate stacks have sidewall spacers made of the insulating material.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.