Transistor antifuse device
US7679426B2 · kind B2 · utility
0Cited by
17References
51Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 19, 2005 |
| Grant date | Mar 16, 2010 |
| Priority date | — |
| Expiry date | Jul 9, 2026 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C17/16
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
In one embodiment, a method provides a bipolar junction transistor that is coupled to a first power supply. A second power supply is utilized to turn on the bipolar junction transistor. And, the bipolar junction transistor is overdriven.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.