Semiconductor memory device controlling program voltage according to the number of cells to be programmed and method of programming the same
US7679964B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jan 12, 2007 |
| Grant date | Mar 16, 2010 |
| Priority date | — |
| Expiry date | Oct 24, 2027 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/30
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A semiconductor memory device controlling a program voltage according to the number of cells to be programmed and a method of programming the same. The semiconductor memory device includes a memory cell array. A write data buffer receives write data in a predetermined unit. A program cell counter calculates the amount of data, from the write data, to be programmed in the memory cell array. A program voltage generator outputs a program voltage to be applied to the memory cell array, in accordance with the amount of data to be programmed, at a time, in the memory cell array. The program voltage is controlled in accordance with the number of memory cells to be programmed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.