Germanium doped n-type aluminum nitride epitaxial layers
US7682709B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 30, 1995 |
| Grant date | Mar 23, 2010 |
| Priority date | — |
| Expiry date | Oct 30, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/854
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of preparing an n-type epitaxial layer of aluminum nitride conductively doped with germanium comprises directing a molecular beam of aluminum atoms onto the growth surface of a substrate that provides an acceptable lattice match for aluminum nitride; directing a molecular beam of activated nitrogen to the growth surface of the substrate; and directing a molecular beam of germanium to the growth surface of the substrate; while maintaining the growth surface of the substrate at a temperature high enough to provide the surface mobility and sticking coefficient required for epitaxial growth, but lower than the temperature at which the surface would decompose or the epitaxial layer disassociate back into atomic or molecular species.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.