Superlattice photodiodes with polyimide surface passivation
US7682865B2 · kind B2 · utility
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1References
20Claims
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Key dates
| Filing date | Jun 10, 2008 |
| Grant date | Mar 23, 2010 |
| Priority date | — |
| Expiry date | Oct 30, 2028 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/50
Abstract
The subject invention comprises the realization of a superlattice photodiode with polyimide surface passivation. Effective surface passivation of type-II InAs/GaSb superlattice photodiodes with cutoff wavelengths in the long-wavelength infrared is presented. A stable passivation layer, the electrical properties of which do not change as a function of the ambient environment, nor time, can be realized by a solvent-based surface preparation, vacuum desorption, and the application of an insulating polyimide layer.
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