Method for fabricating pixel structure

US7682884B2 · kind B2 · utility

Assignee

• Au Optronics Corporation · TW

Inventors

• Han-Tu Lin · Zhuolan Township, TW
• Chih-Chun Yang · Hsinchu, TW
• Ming-Yuan Huang · Erlun, TW
• Chih-Hung Shih · Baoshan, TW
• Ta-Wen Liao · Gongguan, TW
• Chia-Chi Tsai · Hsinchu, TW

Key dates

• Filing date: Jan 22, 2008
• Grant date: Mar 23, 2010
• Expiry date: Apr 13, 2028

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D86/60

Abstract

A method for fabricating a pixel structure using a laser ablation process is provided. This fabrication method forms a gate, a channel layer, a source, a drain, a passivation layer, and a pixel electrode sequentially by using a laser ablation process. Particularly, the fabrication method is not similar to a photolithography and etching process, so as to reduce the complicated photolithography and etching processes, such as spin coating process, soft-bake, hard-bake, exposure, developing, etching, and stripping. Therefore, the fabrication method simplifies the process and thus reduces the fabrication cost.