Method of manufacturing semiconductor device
US7682927B2 · kind B2 · utility
9Cited by
4References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 24, 2006 |
| Grant date | Mar 23, 2010 |
| Priority date | — |
| Expiry date | Mar 24, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02326
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing a semiconductor device includes coating a solution containing a perhydrosilazane polymer on a substrate, heating the solution to form a film containing the perhydrosilazane polymer, and oxidizing the film in a water vapor atmosphere at a reduced pressure to convert the film into an insulating film containing silicon and oxygen.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.