Photosensor and method for fabricating the same
US7683309B1 · kind B1 · utility
2Cited by
3References
30Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 2, 2009 |
| Grant date | Mar 23, 2010 |
| Priority date | — |
| Expiry date | Jan 22, 2029 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
Abstract
A photosensor includes a metal conductive layer, an interface dielectric layer, a silicon-rich dielectric layer and a transparent conductive layer. The interface dielectric layer is formed on the metal conductive layer. The silicon-rich dielectric layer is formed on the interface dielectric layer. The transparent conductive layer is formed on the silicon-rich dielectric layer. A method for fabricating a photosensor is also disclosed herein.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.