Source/drain electrodes, transistor substrates and manufacture methods, thereof, and display devices
US7683370B2 · kind B2 · utility
34Cited by
5References
22Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 2, 2006 |
| Grant date | Mar 23, 2010 |
| Priority date | — |
| Expiry date | Aug 2, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a thin-film transistor substrate including a substrate, a thin-film transistor semiconductor layer, a source/drain electrode, and a transparent pixel electrode, the source/drain electrode includes a thin film of an aluminum alloy containing 0.1 to 6 atomic percent of nickel as an alloy element, and the aluminum alloy thin film is directly connected to the thin-film transistor semiconductor layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.