Facet extraction LED and method for manufacturing the same
US7683385B2 · kind B2 · utility
3Cited by
6References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 16, 2007 |
| Grant date | Mar 23, 2010 |
| Priority date | — |
| Expiry date | Sep 21, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/819
Abstract
A facet extraction LED improved in light extraction efficiency and a manufacturing method thereof. A substrate is provided. A light emitting part includes an n-type semiconductor layer, an active layer and a p-type semiconductor layer sequentially stacked on the substrate. A p-electrode and an n-electrode are connected to the p-type semiconductor layer and the n-type semiconductor layer, respectively. The p- and n-electrodes are formed on the same side of the LED. The light emitting part is structured as a ring.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.