Trench gate-type MOSFET device and method for manufacturing the same
US7683425B2 · kind B2 · utility
5Cited by
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13Claims
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Key dates
| Filing date | Oct 31, 2007 |
| Grant date | Mar 23, 2010 |
| Priority date | — |
| Expiry date | Feb 7, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/519
Abstract
A semiconductor device includes a first conduction type semiconductor substrate, a second conduction type base region in the substrate, a high concentration first conduction type source region in the base region, and first and second trenches. The source region is formed in an opposite side of the substrate. The first and second trenches pass through the source region and the base region, and the first and second trenches have different widths and shapes, respectively.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.