CMOS image sensors with light shielding patterns
US7683451B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Oct 17, 2007 |
| Grant date | Mar 23, 2010 |
| Priority date | — |
| Expiry date | Oct 30, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/8057
Abstract
An image sensor includes a semiconductor substrate including an active pixel region and an optical black region, a wiring pattern on the active pixel region and on the optical black region, and a light shielding pattern on the wiring pattern in the optical black region, the light shielding pattern including an opening therein. A dummy pattern is in the optical black region and is spaced apart from the light shielding pattern. The dummy pattern blocks light incident through the openings of the light shielding patter. An inter-metal dielectric layer fills spaces between the patterns, and a passivation layer is on the inter-metal dielectric layer. The dummy pattern includes an opening therein, and a hydrogen diffusion path is provided from the passivation layer, through the opening in the light shielding pattern and the opening in the dummy pattern, to the semiconductor substrate. The dummy pattern may be on the same level as the wiring pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.