Magnetoelectronic devices based on colossal magnetoresistive thin films
US7684147B2 · kind B2 · utility
13Cited by
11References
18Claims
0Family size
Inventors
Key dates
| Filing date | Dec 15, 2004 |
| Grant date | Mar 23, 2010 |
| Priority date | — |
| Expiry date | Jan 26, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01F1/407
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
The present invention is directed to the use of perovskite manganite thin films and other magnetic films that exhibit both planar Hall effect and biaxial magnetic anisotropy to form the active area in magnetic sensor devices and in magnetic bit cells used in magnetoresistive random access memory (MRAM) devices. The manganite thin films of the invention are ferromagnetic manganites of the formula R1-xAxMnO3, wherein R is a rare-earth metal, A is an alkaline earth metal, and x is generally between about 0.15 and about 0.5.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.