Silicon alloy coating of insulated wire
US7686925B2 · kind B2 · utility
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2References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 4, 2006 |
| Grant date | Mar 30, 2010 |
| Priority date | — |
| Expiry date | Jan 28, 2029 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C14/562
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Method and apparatus for sputter coating an insulated wire with a silicon and metal alloy, to provide the wire with sufficient surface conductivity to protect against build-up of electrostatic charge. A sputtering target of silicon has a metal plate positioned close enough to the sputtering site on the target to permit metal atoms to be dislodged by sputtered silicon, and deposited with the silicon to form an alloy. In the disclosed form of the invention, the wire is insulated with a polyimide material and the metal alloyed with silicon in the sputtered coating is stainless steel.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.