Sensing apparatus and method
US7686929B2 · kind B2 · utility
166Cited by
16References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 11, 2002 |
| Grant date | Mar 30, 2010 |
| Priority date | — |
| Expiry date | Sep 14, 2025 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC12Q2565/607
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A sensing apparatus comprising an ion sensitive field effect transistor arranged to generate an electrical output signal in response to localized fluctuations of ionic charge at or adjacent the surface of the transistor, and means for detecting the electrical output signal from the ion sensitive field effect transistor, the localized fluctuations of ionic charge indicating events occurring during a chemical reaction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.