TFT-LCD pixel structure and manufacturing method thereof
US7687330B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 13, 2008 |
| Grant date | Mar 30, 2010 |
| Priority date | — |
| Expiry date | Nov 13, 2028 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02F1/13625
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A thin film transistor liquid crystal display (TFT-LCD) pixel structure comprising: a gate line and a gate electrode formed on a substrate; a first insulating layer, a semiconductor layer, and a doped semiconductor layer formed sequentially on the gate electrode and the gate line, wherein an isolating groove is formed above the gate line which disconnects the semiconductor layer on the gate line; a second insulating layer covering the isolating groove and a portion of the substrate where the gate line and the gate are not formed; a pixel electrode formed on the second insulating layer, wherein the pixel electrode is integral with a drain electrode and is connected with the doped semiconductor layer on the gate electrode at a place where the drain electrode is formed; a source electrode, which is a portion of a data line, formed on the doped semiconductor layer; and a channel formed between the source electrode and the drain electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.