Method of fabricating thin film transistor and array substrate for liquid crystal display device including the same
US7687333B2 · kind B2 · utility
4Cited by
1References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 27, 2007 |
| Grant date | Mar 30, 2010 |
| Priority date | — |
| Expiry date | Dec 27, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76841
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
According to an embodiment, a method of fabricating a thin film transistor comprises forming a gate electrode on a substrate; forming a gate insulating layer on the gate electrode; forming a semiconductor layer on the gate insulating layer, the semiconductor layer corresponding to the gate electrode; forming first and second barrier patterns on the semiconductor layer, the first and second barrier patterns including copper nitride; and forming source and drain electrodes on the first and second barrier patterns, respectively, the source and drain electrodes including pure copper.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.