Infrared ray sensing element and method of producing the same
US7687774B2 · kind B2 · utility
18Cited by
1References
8Claims
0Family size
Assignee
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Key dates
| Filing date | Nov 13, 2006 |
| Grant date | Mar 30, 2010 |
| Priority date | — |
| Expiry date | Apr 21, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/184
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
An infrared ray sensing element, includes: 1) a semiconductor substrate; 2) an infrared ray receiver disposed above the semiconductor substrate in such a manner as to be isolated from the semiconductor substrate, the infrared ray receiver being configured to receive an infrared ray; and 3) a beam configured to support the infrared ray receiver to the semiconductor substrate and include a thermopile configured to sense a temperature increase of the infrared ray receiver, wherein one of the following has a cross sectional shape that includes at least one protruding part: i) the beam, and ii) the thermopile.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.