Inverter
US7687807B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 6, 2007 |
| Grant date | Mar 30, 2010 |
| Priority date | — |
| Expiry date | Aug 28, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K19/10
Abstract
Provided are a structure and fabricating method of a new inverter for controlling a threshold voltage of each location when an inverter circuit is manufactured using an organic semiconductor on a plastic substrate.In general, p-type organic semiconductor is stable. Accordingly, when the inverter is formed of only the p-type semiconductor, a D-inverter composed of a depletion load and an enhancement driver has large gains, wide swing width and low power consumption, which is more preferable than an E-inverter composed of an enhancement load and an enhancement driver. However, it is impossible to form a depletion transistor and an enhancement transistor on the same substrate while controlling them by locations.To overcome such a difficulty, the structure of the inverter in which a bottom gate organic semiconductor transistor showing enhancement type characteristics is used as a driver transistor, and a top gate organic semiconductor transistor showing depletion type characteristics is used as a load transistor, and a manufacturing method thereof are proposed. According to this structure, a passivation effect of an organic semiconductor may be additionally obtained by a second insulat…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.