Resistive memory device having array of probes and method of manufacturing the resistive memory device
US7687838B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 3, 2005 |
| Grant date | Mar 30, 2010 |
| Priority date | — |
| Expiry date | Mar 26, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B63/00
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
Provided are a resistive memory device having a probe array and a method of manufacturing the same. The resistive memory device includes a memory part having a bottom electrode and a ferroelectric layer sequentially formed on a first substrate; a probe part having an array of resistive probes arranged on a second substrate, with the tips of the resistive probes facing the ferroelectric layer so as to write and read data on the ferroelectric layer; and a binding layer which grabs and fixes the resistive probes on or above the ferroelectric layer. The method of manufacturing the resistive memory device includes forming a bottom electrode and a ferroelectric layer sequentially on a first substrate; forming an array of resistive probes on a second substrate; and wafer level bonding the first substrate to the second substrate using a binding layer such that tips of the resistive probes face the ferroelectric layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.