Nonvolatile memory device
US7687846B2 · kind B2 · utility
0Cited by
3References
7Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Nov 17, 2006 |
| Grant date | Mar 30, 2010 |
| Priority date | — |
| Expiry date | Jun 13, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/684
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Disclosed are nonvolatile memory devices and methods of fabricating the same. A nonvolatile memory device can include a field isolation film configured to define active regions in a substrate and a wordline configured to intersect the active regions. Devices can also include source and drain regions formed in each of the active regions at both sides of the wordline and a source line configured to extend along the wordline under the source region. Devices can further include a join region configured to connect the source region with the source line.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.