High on-state breakdown heterojunction bipolar transistor
US7687886B2 · kind B2 · utility
22Cited by
1References
14Claims
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Key dates
| Filing date | Jun 14, 2005 |
| Grant date | Mar 30, 2010 |
| Priority date | — |
| Expiry date | Jan 30, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/137
Abstract
A heterojunction bipolar transistor (HBT) is provided with an improved on-state breakdown voltage VCE. The improvement of the on-state breakdown voltage for the HBT improves the output power characteristics of the HBT and the ability of the HBT to withstand large impedance mismatch (large VSWR). The improvement in the on-state breakdown voltage is related to the suppression of high electric fields adjacent a junction of a collector layer and a sub-collector layer forming a collector region of the HBT.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.