Patent · US Expired

Method and installation for the densification of substrates by means of chemical vapor infiltration

US7691440B2 · kind B2 · utility

13Cited by
6References
21Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJan 14, 2003
Grant dateApr 6, 2010
Priority date
Expiry dateMar 19, 2026

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY10S427/10
  • WIPO fieldSurface technology, coating
  • WIPO sectorChemistry

Abstract

A method of densifying porous substrates by chemical vapor infiltration comprises loading porous substrates for densification in a loading zone of an enclosure (10), heating the internal volume of the enclosure, and introducing a reagent gas into the enclosure though an inlet situated at one end of the enclosure. Before coming into contact with substrates (20) situated in the loading zone, the reagent gas admitted into the enclosure is preheated, at least in part, by passing along a duct (30) connected to the gas inlet and extending through the loading zone, the duct being raised to the temperature inside the enclosure, and the preheated reagent gas is distributed in the loading zone through one or more openings (33) formed in the side wall (32) of the duct, along the duct.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.