Positive resist compositions and patterning process
US7691561B2 · kind B2 · utility
2Cited by
7References
8Claims
0Family size
Assignee
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Key dates
| Filing date | Jul 5, 2007 |
| Grant date | Apr 6, 2010 |
| Priority date | — |
| Expiry date | Jul 7, 2027 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S430/111
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
In a positive resist composition comprising (A) a resin component which becomes soluble in an alkaline developer under the action of an acid and (B) a photoacid generator, component (A) is a polymer of formula (1) wherein R1 is H, methyl or trifluoromethyl, R2 and R3 are alkyl, R4 is a monovalent hydrocarbon group, X1 is O, S or CH2CH2, X2 is O, S, CH2 or CH2CH2, n is 1 or 2, a and b each are from 0.01 to less than 1, c, d1 and d2 each are from 0 to less than 1, and a+b+c+d1+d2=1. The resist composition forms a pattern with high rectangularity at an enhanced resolution when processed by ArF lithography.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.