Radiation-emitting semiconductor element and method for producing the same

US7691659B2 · kind B2 · utility

Assignee

• OSRAM GmbH · DE

Inventors

• Stefan Bader · Fort Collins, US
• Berthold Hahn · Hemau, DE
• Volker Harle · Hemau, DE
• Hans-Jürgen Lugauer · Sinzing, DE
• Manfred Mundbrod-Vangerow · Oxenbronn, DE
• Dominik Eisert · Regensberg, DE

Key dates

• Filing date: Feb 25, 2005
• Grant date: Apr 6, 2010
• Expiry date: Mar 6, 2025

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H29/14

Abstract

This invention describes a radiation-emitting semiconductor component based on GaN, whose semiconductor body is made up of a stack of different GaN semiconductor layers (1). The semiconductor body has a first principal surface (3) and a second principal surface (4), with the radiation produced being emitted through the first principal surface (3) and with a reflector (6) being produced on the second principal surface (4).The invention also describes a production method for a semiconductor component pursuant to the invention. An interlayer (9) is first applied to a substrate (8), and a plurality of GaN layers (1) that constitute the semiconductor body of the component are then applied to this. The substrate (8) and the interlayer (9) are then detached and a reflector (6) is produced on a principal surface of the semiconductor body.